Nanopore Formation on SOI(100) by CH3SiH3 Pulse Jet CVD: SiC Growth Temperature Dependence

Yoshifumi Ikoma; Yuta Nishino; Shouhei Anan; Toshiaki Abe; Hirofumi Sakita

doi:10.4028/www.scientific.net/MSF.750.252

Paper Titles

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Formation of Nanocrystalline Si by Au-Catalyzed CH₃SiH₃ Pulse Jet CVD
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Photo-Electrochemical Properties of Titanium Dioxide Thin Films Prepared by Reactive RF Sputtering Method
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Nanopore Formation on SOI(100) by CH₃SiH₃ Pulse Jet CVD: SiC Growth Temperature Dependence
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Hydrogen-Induced Ductility Loss in Cast Irons
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Effect of Dry-Ice Blasting on the Microstructure and Properties of Plasma-Sprayed CoNiCrAlY Coating
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HomeMaterials Science ForumMaterials Science Forum Vol. 750Nanopore Formation on SOI(100) by CH3SiH3 Pulse...

Nanopore Formation on SOI(100) by CH₃SiH₃ Pulse Jet CVD: SiC Growth Temperature Dependence

Abstract:

We investigated the formation of nanopores on top Si layers of silicon on insulator substrates by CH₃SiH₃ pulse jet chemical vapor deposition. Nanopores were obtained by chemical etching of the buried oxide layer below the pits which were introduced during the SiC growth. The high nanopore density was obtained when the SiC growth temperature was set at 925 °C. The nanopore density gradually decreased with increasing the temperature at higher SiC growth temperature. The pore size increased with increasing the SiC growth temperature. These results suggest that pore density and size strongly depend on the SiC growth temperature.

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Materials Science Forum (Volume 750)

Pages:

252-255

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.750.252

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Online since:

March 2013

Authors:

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

Keywords:

Nanopore, Pulse Jet CVD, Silicon Carbide (SiC), Silicon-on-Insulator (SOI)

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