Formation of Nanocrystalline Si by Au-Catalyzed CH3SiH3 Pulse Jet CVD

Toshiaki Abe; Shouhei Anan; Fumiya Watanabe; Ryoji Takahashi; Yoshifumi Ikoma

doi:10.4028/www.scientific.net/MSF.750.244

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Purification of Silicon Using the Liquid Phase Migration Technique under Temperature Gradient
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HomeMaterials Science ForumMaterials Science Forum Vol. 750Formation of Nanocrystalline Si by Au-Catalyzed...

Formation of Nanocrystalline Si by Au-Catalyzed CH₃SiH₃ Pulse Jet CVD

Abstract:

Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition has been investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH₃SiH₃ pulse jets were irradiated onto the Au/SiO₂/Si(100) surface. The irradiation of the CH₃SiH₃ jets at 1150 °C resulted in circular patterns with a diameter of ~40 µm on the sample surfaces. In the center of the circular patterns, agglomerations of Au were observed. It was found that the oxide layer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circular patterns. These results indicate that the nanocrystalline Si was grown by the VLS process in which Si atoms were supplied from the oxide layer, Si substrate, and CH₃SiH₃ molecules.

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Periodical:

Materials Science Forum (Volume 750)

Pages:

244-247

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.750.244

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Online since:

March 2013

Authors:

Toshiaki Abe, Shouhei Anan, Fumiya Watanabe, Ryoji Takahashi, Yoshifumi Ikoma

Keywords:

Au, Nanocrystalline Si, Organosilicon Gas, VLS Growth

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References

[1] A. G. Cullis, L. T. Canham and P. D. J. Calcott: J. Appl. Phys., Vol. 82 (1997), p.909.

Google Scholar

[2] S. -K. Kim, C. -H. Cho, B. -H. Kim, S. -J. Park and J. W. Lee: Appl. Phys. Lett., Vol. 95 (2009), p.143120.

Google Scholar

[3] Y. Chi, L. J. Lauhon, M. S. Gudiksen, J. Wang, and C. M. Lieber: Appl. Phys. Lett., Vol 78 (2001), p.2214.

Google Scholar

[4] R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. Vol. 4 (1964), 89.

Google Scholar

[5] Y. Ikoma. T. Endo, F. Watanabe and T. Motooka: Jpn. J. Appl. Phys. Part 2, Vol 38 (1999), p. L301.

Google Scholar

[6] Y. Ikoma, R. Ohtani and T. Motooka: Mater. Sci. Forum, Vol. 457–460 (2004), p.325.

Google Scholar

[7] R. Ohtani, Y. Ikoma and T. Motooka: Jpn. J. Appl. Phys. , Vol 45 (2006), p.2514.

Google Scholar

[8] Y. Ikoma, R. Okuyama, M. Arita and T. Motooka: Thin Solid Films, Vol. 518 (2010), p.3759.

Google Scholar

[9] D. S. Sarkar, S. Bera, S. Dhara, K. G. M. Nair, S. V. Narasimhan, and S. Chowdhury, Appl. Surf. Sci., Vol. 120 (1997). p.159.

Google Scholar