Influence of RTA Treatment on the Properties of ZnO-CeO2 Dielectric Films

Ching Fang Tseng; Ren Ya Yang; Chien Hua Chen

doi:10.4028/www.scientific.net/MSF.787.232

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HomeMaterials Science ForumMaterials Science Forum Vol. 787Influence of RTA Treatment on the Properties of...

Influence of RTA Treatment on the Properties of ZnO-CeO₂ Dielectric Films

Abstract:

The electrical and physical properties of ZnO-CeO₂ thin films on n-type Si (100) substrates have been examined by sol-gel method. In addition, the structures were heat treated at different temperatures from 600 to 700^oC using the RTA (Rapid Thermal Annealing) process and investigated the influence of RTA effect on their properties. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZnO-CeO₂ peaks orientation perpendicular to the substrate surface and the grain size with the dependent on annealing temperature. The dependence of the physical and electrical characteristics on various annealing temperatures was investigated.

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Periodical:

Materials Science Forum (Volume 787)

Pages:

232-235

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.787.232

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Online since:

April 2014

Authors:

Ching Fang Tseng*, Ren Ya Yang, Chien Hua Chen

Keywords:

Microstructure, RTA, Sol-Gel Method, ZnO-CeO₂ Thin Films

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