Research on HfSiN Diffusion Barrier Thin Film for Micro-Nanoscale ULSI-Cu Metallization

Abstract:

HfSiN/Cu/HfSiN/SiO₂/Si multilayer films were prepared on Si substrate via magnetron sputtering technology. Annealing experiments of samples among 400°C and 700°C were carried out in order to investigate the anti-diffusion performance of HfSiN thin film to Cu. XRD, AFM and FPP were used to characterize the structure, morphology and the resistivity of the thin films before and after annealing, respectively. The failure temperature and failure mechanism of HfSiN thin film were analyzed. The anti-diffusion failure temperature of HfSiN thin film is 600 °C. And the main reason is that a large number of Cu large particles passed through HfSiN diffusion barrier layer and reacted with Si substrate and oxygen to generate Cu₃Si and CuO with high resistance.

• Periodical: Materials Science Forum (Volumes 809-810)
• Pages: 583-588
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.809-810.583
• Online since: December 2014
• Authors: Xue Mei Liu*, Xiu Hua Chen, Yong Qiang Han, Wen Hui Ma, Jia Li He, Yong Yin Xiao, Jiao Li
• Keywords: Cu Diffusion, Failure Mechanism, HfSiN/Cu/HfSiN/SiO₂/Si Multifilms, Magnetron Sputtering

References

[1] Y.L. Kuo, J.C. Lin , W.H. Lee, C.Y. Lee and Y.W. Yen: Thin Solid Films, Vol. 484 (2005), pp.265-271.

[2] A. Kumar, M.K. Kumar and D. Kumar: Applied Surface Science, Vol. 258 (2012), pp.7962-7967.

[3] A. Kumar, M.K. Kumar and D. Kumar: Microelectronic Engineering, Vol. 87 (2010), pp.387-390.

[4] H.J. Luo, B.N. Song, Y.H. Liu and G.C. Yao: Transactions of Nonferrous Metals Society of China, Vol. 21 (2011) No. 10, pp.2225-2230.

[5] H. Liu, R.X. Guo and Z. Liu: Transactions of Nonferrous Metals Society of China, Vol. 22(2012) No. 12, pp.3012-3020.

[6] K.L. Ou: Microelectronic Engineering, Vol. 83 (2006) No. 2, pp.312-318.

[7] X.H. Chen, X.H. Wu, J.Z. Xiang, Z.L. Zhou, H.Y. Zhao and L.Q. Chen: Journal of Materials Science & Technology, Vol. 22 (2006) No. 03, pp.342-344.

[8] X.X. Gao, Y.H. Jia, G.P. Li and J.P. Ma: Advanced materials Research, Vols. 287-290 (2011), pp.2302-2307.

[9] D.C. Tsai, Y.L. Huang, S.R. Lin, D.R. Jung, S.Y. Chang, Z.C. Chang, M.J. Deng and F.S. Shieu: Surface & Coatings Technology, Vol. 205 (2011), p.5064–5067.

DOI: 10.1016/j.surfcoat.2011.05.007

[10] Information on http: /www. eet-china. com/ART_8800647586_480201_NT_4d5b8929. HTM.

[11] Information on http: /www. eet-china. com/ART_8800686606_480201_NP_bd3dca4c. HTM.

[12] Information on http: /www. eet-china. com/ART_8800654247_480201_NT_5088d493. HTM.

[13] K.C. Hsu, D.C. Perng and Y. C: Journal of Alloys and Compounds, Vol. 516 (2012), pp.102-106.

[14] Y. Meng, Z.X. Song, D. Qian, W.J. Dai, J.F. Wang, F. Ma, Y.H. Li and K.W. Xu: Journal of Alloys and Compounds, Vol. 588 (2014), pp.461-464.

[15] N. Dalili, Q. Liu and D.G. Ivey: Thin Solid Films, Vol. 61 (2013), pp.5365-5374.

[16] J.S. Fang, L.C. Yang and Y.C. Lee: Journal of Alloys and Compounds, Vol. 586 (2014), p. S348–S352.

[17] P.Y. Deng and J.F. Qu: Journal of Harbin Bearing, Vol. 34 (2013) No. 2, pp.101-103. (In Chinese).

[18] Y.P. Zhang, B. Liu, D. Ren, L.W. Lin, B. Yang and K.W. Xu: Science and technology of China, Vol. 2 (2013) No. 8, pp.132-135. (In Chinese).

[19] W.Q. Zhang: Research on RSiN（R=W, Hf, Zr）ternary barrier layer film in sub-45nm ULSI Cu interconnect. Yunnan: Yunnan University (MS., Yunnan University, China 2010), p.20. (In Chinese).

[20] Z.Y. Zhang, X.H. Chen and Y.Q. Han: Vol. 49 (2012) No. 1, pp.33-38. (In Chinese).

[21] X.H. Chen, W.Q. Zhang, J.Z. Xiang, Z.Y. Zhang and L.H. Wang: China CN101969067A. (2011).

[22] Z.Q. Wu and B. Wang, X. Sun: Thin film growth (Science Press, China 2001).