Research and Preparation of High Quality Polysilicon Ingots and Multicrystalline Silicon (mc-Si) Cells

Da Wei Luo; Jun Feng Li; Jian Ping Long

doi:10.4028/www.scientific.net/MSF.814.345

Paper Titles

Research on Corrosion Rate of Sucker Rod Steel 20Ni2Mo in Wet H₂S Environment
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Process of Salicylic Acid-Type Composite for Rare Earth Ions
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Application of Ultrafine Weighting Materials in High-Density Oil-Based Drilling Fluid Technology
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Research and Preparation of High Quality Polysilicon Ingots and Multicrystalline Silicon (mc-Si) Cells
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Effects of Synthesis Temperature and Holding Time on the Electrochemical Properties of LiNi_1/3Co_1/3Mn_1/3O₂ Cathode Material Using Rheological Phase Method
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In Situ Synthesis of Graphitized-Carbon Coated Li₄Ti₅O₁₂/C Anode for High-Rate Lithium Ion Batteries
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Preparation of New Multi-Component Nanometer Manganese Dioxide/Carbon for Air Electrode
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Removal of Nickel (II) Ion from Wastewater by Modified Maifanite
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HomeMaterials Science ForumMaterials Science Forum Vol. 814Research and Preparation of High Quality...

Research and Preparation of High Quality Polysilicon Ingots and Multicrystalline Silicon (mc-Si) Cells

Abstract:

Directional solidification is a main method of mc-Si production for solar cells. The main impurities in MS-Si are oxygen and carbon. In this paper, an improved furnace was designed to reduce the carbon and oxygen impurity in MS-Si at unidirectional solidification process. Simulation results showed that the flow pattern of impurity gas at the top of the silicon melt significantly improved under the small cover conditions and the impurity gas eddy currents was also avoided. Experimental results show that the carbon and oxygen content inside the ingot were both significantly reduced when the eddy currents inside the crucible was suppressed and the average minority carrier’s lifetime of silicon block was significantly increased under the conditions of small cover plate. Meantime, the average cell efficiency of ingot was more than 17% under small cover condition which is significantly higher than that of the ordinary ingot.

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Periodical:

Materials Science Forum (Volume 814)

Pages:

345-350

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.814.345

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Online since:

March 2015

Authors:

Da Wei Luo, Jun Feng Li, Jian Ping Long

Keywords:

Directional Solidification Systems, Ingot, Minority Carrier’s Lifetime, Polycrystalline Silicon

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