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Influence of Sputtering Power on the Structure, Optical and Electric Properties of Cu3N Films

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Abstract:

The Cu3N films were deposited successfully by reactive direct current magnetron sputtering, the films were comprehensively and systematically characterized by X-ray diffraction analyzer (XRD), UV-Visible spectrophotometer, four-probe resistance tester and other instruments. Results showed that under low deposition power (80W~100W), crystal orientation increased, which is attributed to higher energy under higher power. When sputtering power exceeded the value, excessive energy led to anti-sputtering hindering the process of further nucleation and growth of films. The transmittance of the films deposited under 100W reached the peak value of 78% on the scope of near-infrared light, and optical band gap (Eg) of 1.35ev. The resistivity of Cu3N films increased from 9.68×102Ω.cm to 2.12×103 Ω.cm with increasing in sputtering power up to 100W.

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Periodical:

Materials Science Forum (Volume 814)

Pages:

596-600

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.814.596

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Online since:

March 2015

Authors:

Li Na Chen, Jin Feng Leng*, Zhong Xi Yang, Zhi Chao Meng, Bin Sun

Keywords:

Copper Nitride Thin Films, Magnetron Sputtering, Transmittance Resistivity

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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