Modeling the Effect of ARC and other Parameters on the Efficiency of GaAs Solar Cell Using Silvaco

Abstract:

Gallium Arsenide (GaAs) based solar cell which have nearly ideal direct bandgap of 1.43eV hold the highest single junction solar cell efficiency. GaAs solar cell without Anti-Reflective Coating (ARC) layer was studied and shows the efficiency ranges between 8% to 15%, followed by GaAs solar cell with efficiency ranges between 20% to 25% with ARC layer. The substrate thickness for both GaAs solar cell was varied from 0.1μm to 1.0μm. Increased of P-type substrate thickness shows a small variation in efficiency with parabolic shape, while increased of N-type substrate thicknesss increased the efficiency between 21% to 25% for single layer GaAs with ARC thickness. Besides that, increased of P-type doping concentration from 1×10¹⁸cm^-3 to 1×10¹⁹cm^-3 and fixed N-type doping will decreased the efficiency. However increased the N-type doping concentration from 1×10¹⁷cm^-3 to 1×10¹⁸cm^-3 and fixed the P-type doping will increased the efficiency. The thickness of ARC layer on GaAs solar cell was studied and shows that highest efficiency achieved at narrow thickness of ARC.

• Periodical: Materials Science Forum (Volume 819)
• Pages: 204-208
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.819.204
• Online since: June 2015
• Authors: Lim Kean Sai, Rozana Aina Maulat Osman, Mohd Sobri Idris
• Keywords: Anti-Reflective Coating, Efficiency, Gallium Arsenide, Silvaco, Solar Cell

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