The Role of Chlorine during High Growth Rate Epitaxy

Robin Karhu; Ian Booker; Jawad Hassan; Ivan Ivanov; Erik Janzén

doi:10.4028/www.scientific.net/MSF.821-823.141

Paper Titles

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
p.125

Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
p.129

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
p.133

Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace
p.137

The Role of Chlorine during High Growth Rate Epitaxy
p.141

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC
p.145

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers
p.149

150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
p.153

Epitaxial Growth on 150 mm 2° off Wafers
p.157

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823The Role of Chlorine during High Growth Rate...

The Role of Chlorine during High Growth Rate Epitaxy

Abstract:

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.

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Materials Science Forum (Volumes 821-823)

Pages:

141-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.141

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Online since:

June 2015

Authors:

Robin Karhu*, Ian Booker, Jawad Hassan, Ivan Ivanov, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Chlorine, Doping, Epitaxy, High Growth Rate

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