Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

Takanori Tanaka; Naoyuki Kawabata; Yoichiro Mitani; Masashi Sakai; Nobuyuki Tomita; Masayoshi Tarutani; Takeharu Kuroiwa; Yoshihiko Toyoda; Masayuki Imaizumi; Hiroaki Sumitani; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.821-823.133

Paper Titles

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface
p.121

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
p.125

Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
p.129

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
p.133

Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace
p.137

The Role of Chlorine during High Growth Rate Epitaxy
p.141

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC
p.145

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers
p.149

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Influence of Growth Pressure and Addition of HCl...

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

Abstract:

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm², indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

133-136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.133

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Online since:

June 2015

Authors:

Takanori Tanaka*, Naoyuki Kawabata, Yoichiro Mitani, Masashi Sakai, Nobuyuki Tomita, Masayoshi Tarutani, Takeharu Kuroiwa, Yoshihiko Toyoda, Masayuki Imaizumi, Hiroaki Sumitani, Satoshi Yamakawa

Keywords:

4H-SiC, Epitaxial Growth, Growth Pressure, HCl, High Throughput

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References

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