Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation

Véronique Soulière; Kassem Alassaad; François Cauwet; Hervé Peyre; Thomas Kups; Joerg Pezoldt; Pawel Kwasnicki; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.821-823.115

Paper Titles

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach
p.96

Characterization of Second-Phase Inclusion in Silicon Carbide Powders
p.100

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
p.104

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
p.108

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface
p.121

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
p.125

Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
p.129

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
p.133

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Ge Addition during 4H-SiC Epitaxial Growth by CVD:...

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation

Abstract:

In this paper, we will describe a detailed experimental study on the behavior of Ge incorporation into 4H-SiC during its homoepitaxial growth by CVD. Addition of GeH₄ precursor to the standard chemical system SiH₄ + C₃H₈ was investigated as a function of various growth parameters. Its effect on surface morphology, layer quality and purity was followed. All these results will allow proposing an exhaustive picture of Ge incorporation mechanism into 4H-SiC with the possible benefits of such impurity incorporation in the silicon carbide lattice.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2014

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

115-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.115

Citation:

Cite this paper

Online since:

June 2015

Authors:

Véronique Soulière*, Kassem Alassaad, François Cauwet, Hervé Peyre, Thomas Kups, Joerg Pezoldt, Pawel Kwasnicki, Gabriel Ferro

Keywords:

CVD, Doping, Germanium, Homoepitaxy, Incorporation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] K. Katulka, C. Guedj, J. Kolodzey, R.G. Wilson, C. Swann, M.W. Tsao, J. Rabolt, Appl. Phys. Lett., 74 (1999) 540-542.

DOI: 10.1063/1.123186

Google Scholar

[2] V.A. Dimitriev, S. Rendakova, C.H. Jr Carter, V. Ivantsov, U. S. Patent 5, 679, 153 (1997).

Google Scholar

[3] O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker, J. Cryst. Growth, 271 (2004) 142-150.

Google Scholar

[4] M. Soueidan, G. Ferro, O. Kim-Hak, N. Habka, V. Soulière, B. Nsouli, Crystal Growth & Design, 8 (2008) 1051-1054.

DOI: 10.1021/cg701146m

Google Scholar

[5] T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Soulière, G. Ferro, H.B. Weber, M. Krieger, Material Science Forum 778-780 (2014) 261-264.

DOI: 10.4028/www.scientific.net/msf.778-780.261

Google Scholar

[6] S. Nakashima, H. Harima, Phys. Stat. Sol. A, 162 (1997) 39-64.

Google Scholar

[7] N. Habka, V. Soulière, J.M. Bluet, M. Soueidan, G. Ferro, B. Nsouli, Mater. Sci. Forum 600-603 (2009) 529-532.

DOI: 10.4028/www.scientific.net/msf.600-603.529

Google Scholar

[8] M. Marinova, I. Tsiaoussis, N. Frangis, E. K. Polychroniadis, O. Kim-Hak, J. Lorenzzi, G. Ferro, Mater. Sci. Forum 615-617 (2009) 185-188.

DOI: 10.4028/www.scientific.net/msf.615-617.185

Google Scholar

[9] J. Shiyang, K. Kojima, Y. Ishida, S. Saito, T. Kato, H. Tsuchida et al. J. Cryst Growth 380 (2013) 85-92.

Google Scholar

[10] K. Kojima, S. Kuroda, H. Okumura, K. Arai, J. Microelectron Eng 83 (2006) 79-81.

Google Scholar