Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach

Kanaparin Ariyawong; Christian Chatillon; Elisabeth Blanquet; Jean Marc Dedulle; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.821-823.96

Paper Titles

Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC
p.77

SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders
p.81

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
p.85

Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
p.90

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach
p.96

Characterization of Second-Phase Inclusion in Silicon Carbide Powders
p.100

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
p.104

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
p.108

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Assessment of SiC Crystal Chemistry during the PVT...

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach

Abstract:

Numerical simulation appeared till now as the only tool able to describe the SiC growth by PVT process, while the chemistry of the Si-C system and its coupling to mass transfer were not considered in a satisfactory way. To assess the chemistry of SiC crystal, the coupling of numerical and thermodynamic calculations computed by FEM, and by treating SiC as a solid solution, respectively, is presented. This enables the possibilities to control the activity of each component in SiC crystal during the growth. The link between growth conditions and SiC crystal chemistry could be one of the key issues to link the growth and the occurrence of cubic or hexagonal polytypes.

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Materials Science Forum (Volumes 821-823)

Pages:

96-99

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.96

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Online since:

June 2015

Authors:

Kanaparin Ariyawong*, Christian Chatillon, Elisabeth Blanquet, Jean Marc Dedulle, Didier Chaussende

Keywords:

Numerical Modelling, PVT, SiC Crystal Chemistry, Thermodynamic

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