Characterization of Second-Phase Inclusion in Silicon Carbide Powders

Ta Ching Hsiao; Shen Tsao; Sergey Nagalyuk; Evgeny Mokhov

doi:10.4028/www.scientific.net/MSF.821-823.100

Paper Titles

SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders
p.81

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
p.85

Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
p.90

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach
p.96

Characterization of Second-Phase Inclusion in Silicon Carbide Powders
p.100

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
p.104

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
p.108

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface
p.121

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Characterization of Second-Phase Inclusion in Silicon Carbide Powders

Abstract:

A specific transition metal is used as a dopant element in silicon carbide powders to create the compensation effect. According to ab-initio simulation, vanadium, chromium, and manganese-induced compensation decrease the lifetime of the acceptor carrier and cause higher resistance when boron is the main impurity. Since the silicon carbide lattice has low solubility, excess metal precipitates on the surface of powders, particularly on the grain boundaries. The compositions of matrix and precipitation in the powders reveal obvious differences between the two areas. The X-ray diffraction (XRD) pattern shows the structure of VSi₂, which indicates the existence of a second phase. Dual-beam focused ion beam (DBFIB) is used to further analyze the geography inside the powders. A cross-section view by DBFIB shows a second phase in the grains with a composition similar to that in the grain boundary. Metal-doped silicon carbide powders are used as starting materials to conduct crystal growth with better dopant element distribution.