High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

Jun Kojima; Emi Makino; Yuichiro Tokuda; Naohiro Sugiyama; Norihiro Hoshino; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.821-823.104

Paper Titles

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
p.85

Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
p.90

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach
p.96

Characterization of Second-Phase Inclusion in Silicon Carbide Powders
p.100

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
p.104

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
p.108

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface
p.121

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
p.125

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823High-Speed and Long-Length SiC Growth Using...

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

Abstract:

This article gives the results of crystal growth by a High-Temperature Gas Source Method such as HTCVD. It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clustering was compared. The experimental growth rates corresponded to the cluster model, and this indicated that clusters affect the crystal growth. Relations between the experimental growth rate and the growth temperature as a function of gas flow ratio were investigated. The gas flow ratio was defined: (SiH₄+C₃H₈) / (SiH₄+C₃H₈+H₂). Maximum growth rate was 2.3mm/h under high source gas ratio. At present, a Φ75mm×54mm sized ingot has been developed.