Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor

Hiroyoki Nagasawa; Ramya Gurunathan; Maki Suemitsu

doi:10.4028/www.scientific.net/MSF.821-823.108

Paper Titles

Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
p.90

Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach
p.96

Characterization of Second-Phase Inclusion in Silicon Carbide Powders
p.100

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
p.104

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
p.108

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface
p.121

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
p.125

Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
p.129

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Controlling Planar Defects in 3C-SiC: Ways to Wake...

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor

Abstract:

Eelectrically active defects in 3C–SiC are investigated by considering the structures and interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking property of semiconductor devices due to its semimetallic nature. Although APBs can be eliminated by orienting the specific polar face of 3C-SiC along a particular direction, stacking faults (SFs) cannot be eliminated due to Shockley-type partial dislocation glide. SFs with Shockley-type partial dislocations form a trapezoidal plate which expands the Si-terminated surface with increasing 3C-SiC thickness. Although the density of SFs can be reduced by counter termination, specific cross-junctions between a pair of counter SFs forms a forest dislocation, and this is regarded as an electrically active defect. This paper proposes an effective way to suppress the forest dislocations and APBs which nucleate during 3C-SiC growth.

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Materials Science Forum (Volumes 821-823)

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108-114

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https://doi.org/10.4028/www.scientific.net/MSF.821-823.108

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Online since:

June 2015

Authors:

Hiroyoki Nagasawa*, Ramya Gurunathan, Maki Suemitsu

Keywords:

3C-SiC, Antiphase Boundary (APB), Dislocation, Stacking Fault

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