Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

Hitoshi Habuka; Yusuke Fukumoto; Kosuke Mizuno; Yuuki Ishida; Toshiyuki Ohno

doi:10.4028/www.scientific.net/MSF.821-823.125

Paper Titles

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
p.104

Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor
p.108

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
p.115

Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface
p.121

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
p.125

Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
p.129

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
p.133

Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace
p.137

The Role of Chlorine during High Growth Rate Epitaxy
p.141

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Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

Abstract:

The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the silicon carbide coated carbon susceptor surface during the silicon carbide film deposition. The contact points between the particles and the susceptor surface were etched using chlorine trifluoride gas at temperatures lower than 290 °C for 120 min. During this process, the carbon susceptor covered with the silicon carbide coating film suffered from little damage while achieving cleaning.