Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation

Li Wang; Sima Dimitrijev; Alan Iacopi; Leonie Hold; Glenn Walker; Jessica Chai; David Massoubre

doi:10.4028/www.scientific.net/MSF.821-823.205

Paper Titles

3C-SiC Polycrystalline Films on Si for Photovoltaic Applications
p.189

Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning
p.193

High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈
p.197

Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction
p.201

Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation
p.205

Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD
p.209

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure
p.213

Effect of Nitrogen Dilution in the Optical Properties of Amorphous SiC Thin Films
p.217

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
p.223

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Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation

Abstract:

To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH₄ avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.