Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD

Kassem Alassaad; Véronique Soulière; François Cauwet; Davy Carole; Beatrice Doisneau; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.821-823.209

Paper Titles

Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning
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High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈
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Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction
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Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation
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Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD
p.209

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure
p.213

Effect of Nitrogen Dilution in the Optical Properties of Amorphous SiC Thin Films
p.217

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
p.223

Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging
p.229

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Understanding of the Growth Mechanism Leading to...

Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD

Abstract:

Starting from the previously demonstrated twin-free 3C-SiC growth on 4H-SiC when using Ge pre-deposition treatment, this work focuses on the understanding of the growth mechanism that stands behind this result. Toward this end, short growth experiments were performed to allow the investigation of the nucleation stage. Based on the experimental observations, a mechanism is proposed which involves a Ge-induced transient homoepitaxial growth step followed by 3C nucleation when large terraces are formed by step faceting. Lateral expansion of the 3C islands leads to orientation selection and twin boundary elimination. Similar results can be obtained when applying a Si-based pre-deposition treatment so that the crucial transient homoepitaxial step is promoted in fact by the presence of a liquid phase itself, no by its chemical nature.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.209

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Online since:

June 2015

Authors:

Kassem Alassaad*, Véronique Soulière, François Cauwet, Davy Carole, Beatrice Doisneau, Gabriel Ferro

Keywords:

3C-SiC, CVD, Liquid Phase, Twin Boundary Elimination

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