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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Temperature Dependence of 4H-SiC Ionization Rates...

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

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Abstract:

The behavior of 4H-SiC power devices in severe environment with varying temperature is a key characteristic indicating their reliability. This paper shows the dependence of the ionization rates of 4H-SiC with respect to temperature. Optical Beam Induced Current (OBIC) measurements have been performed on PN junctions to determine the multiplication coefficient for temperature varying between 100 and 450K. That allows extracting the ionization rates by fitting the curves of multiplication coefficient.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

223-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.223

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Online since:

June 2015

Authors:

Hassan Hamad*, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson

Keywords:

4H-SiC, Bipolar Diode, Ionization Rate, Multiplication Coefficient, OBIC

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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[1] A-O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt, Materials Science Forum, vols. 264-268, 513 (1998).

DOI: 10.4028/www.scientific.net/msf.264-268.513

[2] R. Raghunathan and B-J. Baliga, Solid State Electronics, vol. 43, 199 (1999).

[3] D-M. Nguyen, C. Raynaud, M. Lazar, G. Pâques, S. Scharnholz, N. Dheilly, D. Tournier and D. Planson, Materials Science Forum, vols. 717-720, 545 (2012).

DOI: 10.4028/www.scientific.net/msf.717-720.545

[4] W. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H. Y. Cha, P. M. Sandvik, C. M. Johnson and J. P. R David, IEEE Transactions on electron devices, vol. 55, no. 8 (2008).

DOI: 10.1109/ted.2008.926679

[5] T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, and N. Sano, Applied Physics Letters, vol. 85, n°. 8, pp.1380-1382, (2004).

DOI: 10.1063/1.1784520

[6] T. Flohr and R. Helbig, Journal of Applied physics, vol. 66, no. 7, p.3060 (1989).

[7] H. Hamad, P. Bevilacqua, C. Raynaud and D. Planson, 10th Conference on Ph. D. Research In Microelectronics and Electronics PRIME, (2014).

DOI: 10.1109/prime.2014.6872761

[8] P. A. Wolff, Physical Review, vol. 95, no. 6, p.1415 (1954).

[9] W. Shockley, Solid State Electronics, vol. 2, no. 1, p.35 (1961).

[10] A. G. Chynoweth, Journal of Applied Physics, vol. 31, no. 7, p.1161 (1960).

[11] C. Raynaud, D-M. Nguyen, N. Dheilly, D. Tournier, P. Brosselard, M. Lazar and D. Planson. Physica status solidi A, vol. 206, n°10 (2009) pp.2273-2283.

DOI: 10.1002/pssa.200825183

[12] M. Lazar, F. Jomard, D-M. Nguyen, C. Raynaud, G. Pâques, S. Scharnholz, D. Tournier, D. Planson, Materials Science Forum, vols. 717-720, 885 (2012).

DOI: 10.4028/www.scientific.net/msf.717-720.885

[13] C. A. Lee R. A. Logan, R. L. Batdorf, J. J. Kleimack and W. Wiegmann, Physical Review, vol. 134, p. A761 (1964).

DOI: 10.1103/physrev.134.a761

[14] C. R. Crowell and S. M. Sze, Applied physics letter, vol. 9, p.242 (1966).

[15] H. Niwa, J. Suda and T. Kimoto, Materials Science Forum, vol 778-780, p.461 (2014).