Applying Chemometrics for Analysis of SiC Raman Imaging Data

Olga Milikofu; Tomomi Kozu; Tim Batten

doi:10.4028/www.scientific.net/MSF.821-823.241

Paper Titles

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
p.223

Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging
p.229

Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy
p.233

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy
p.237

Applying Chemometrics for Analysis of SiC Raman Imaging Data
p.241

Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses
p.245

Optical Characterization of p-Type 4H-SiC Epilayers
p.249

Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth
p.253

Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis
p.257

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Applying Chemometrics for Analysis of SiC Raman...

Applying Chemometrics for Analysis of SiC Raman Imaging Data

Abstract:

New ultrafast Raman imaging methods allow high definition data to be collected from a whole wafer scale down to individual defects in 2D and 3D, on a time scale suitable for routine quality control. On the other hand, just one hour of data collection can result in datasets containing 10⁵~10⁶ spectra, and attempts to manually analyze such big data with traditional univariate methods can take days, without guarantee that all important information is revealed. Such problem can be easily overcome with fast and automated multivariate analysis methods. Here we introduce the techniques and demonstrate applications to SiC.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.241

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Online since:

June 2015

Authors:

Olga Milikofu*, Tomomi Kozu, Tim Batten

Keywords:

Multivariate Analysis, Raman Spectroscopy, SiC Characterization, SiC Polytypes

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* - Corresponding Author

References

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