Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy

Tomomi Kozu; Makoto Yamaguchi; Masayuki Fujitsuka; Olga Milikofu; Ken Nishida

doi:10.4028/www.scientific.net/MSF.821-823.233

Paper Titles

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure
p.213

Effect of Nitrogen Dilution in the Optical Properties of Amorphous SiC Thin Films
p.217

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
p.223

Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging
p.229

Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy
p.233

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy
p.237

Applying Chemometrics for Analysis of SiC Raman Imaging Data
p.241

Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses
p.245

Optical Characterization of p-Type 4H-SiC Epilayers
p.249

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Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy

Abstract:

In this work, we analyze residual stress on 4H-SiC with Raman spectroscopy that excitation wavelength is deep ultraviolet (DUV) laser 266nm. The residual stress area is created by Vickers Hardness test technique and the area is measured by 2D DUV Raman map. The result is different from visible light excited Raman, because DUV light penetration is shallower than visible light. DUV Raman signal has exactly brings only the sample surface information. We present the advantage of DUV excited Raman to analyze sample surface.