Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging

Tim Batten; Olga Milikofu

doi:10.4028/www.scientific.net/MSF.821-823.229

Paper Titles

Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD
p.209

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure
p.213

Effect of Nitrogen Dilution in the Optical Properties of Amorphous SiC Thin Films
p.217

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
p.223

Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging
p.229

Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy
p.233

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy
p.237

Applying Chemometrics for Analysis of SiC Raman Imaging Data
p.241

Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses
p.245

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Characterising Strain/Stress and Defects in SiC...

Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging

Abstract:

Raman spectroscopy is a well established non-destructive tool for determining crystal polytypes, strain/stress, electronic properties and material quality in SiC. Here we report on the application of ultrafast Raman imaging to a SiC wafer, allowing 870,908 spectra to be collected from a 2 inch 4H-SiC wafer, in 75 minutes. Analysis of the acquired data enabled us to locate and investigate defects and surface contamination and also allowed stress in the wafer to be characterised.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.229

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Online since:

June 2015

Authors:

Tim Batten*, Olga Milikofu

Keywords:

Polytype, RAMAN, Raman Spectroscopy, Stress, Wafer

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