Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Holger Bartolf

doi:10.4028/www.scientific.net/MSF.821-823.604

Paper Titles

A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode
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Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules
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Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes
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Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes
p.600

Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications
p.604

A New 1200V SiC MPS Diode with Improved Performance and Ruggedness
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The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics
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Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA
p.616

Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Comparison of the Planar-JBS against the...

Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Abstract:

We compare the static electronic performance of the state-of-the-art Junction-Barrier-Schottky (JBS) rectifier (manufactured by ion-implantation) against the Trench-MOS Barrier Schottky (TMBS) rectifier (manufactured by trench-etching and subsequent oxidation). In our 2D numerical simulations, we have chosen identical specifications for the epitaxial drift-layer (3.3 kV application voltage, e.g. traction) and back-side device-design, while investigating the impact of the top-cell active area design on both rectifier IV-characteristics. To enable a meaningful comparison, we designed the depth d of the shields for the electric field E equally deep (p⁺ peak-plateau d_JBS equals trench-depth d_t), such that the peak E-field (close to avalanche breakdown) inside the drift-layer of the device is located at a comparable depth near the anode-side of the rectifier (see Fig. 2). By studying systematically the ratio between shield-to Schottky contact-length (w/s ratio), we found that the unipolar conduction state of the TMBS design is basically unaffected by enlarging the Schottky-contact length s, which is enterly different for the JBS-case.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

604-607

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.604

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Online since:

June 2015

Authors:

Holger Bartolf*

Keywords:

3.3 kV, Junction Barrier Schottky (JBS) Diode, Peak Electric Field, Rectifier, Shield for E-Field, Surge Current, TMBS

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