A New 1200V SiC MPS Diode with Improved Performance and Ruggedness

Mihai Draghici; Roland Rupp; Rolf Gerlach; Bernd Zippelius

doi:10.4028/www.scientific.net/MSF.821-823.608

Paper Titles

Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules
p.592

Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes
p.596

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes
p.600

Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications
p.604

A New 1200V SiC MPS Diode with Improved Performance and Ruggedness
p.608

The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics
p.612

Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA
p.616

Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC
p.620

Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications
p.624

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823A New 1200V SiC MPS Diode with Improved...

A New 1200V SiC MPS Diode with Improved Performance and Ruggedness

Abstract:

Infineon’s 5^th Generation of 1200V SiC diodes uses a new compact chip design, realized by an optimized hexagonal merged-pn cell structure in the active area. This allows a higher n-doping in the epi layer due to improved E-field shielding resulting in a smaller differential resistance per chip area. Thanks to the merged-pn cell structure, depending on the diode ampere rating, a surge current capability now rated up to 14 times the nominal current ensures robust diode operation during surge current events in the application. The previous generations of 1200V SiC diodes could not make full use of the high breakdown field strength of the SiC material due to the instable avalanche which occurs at the edge termination only, and therefore, requiring a significant safety margin between rated voltage and breakdown voltage. Now the 5^th Generation is designed in a way that each cell contributes to the avalanche, enabling a much more avalanche rugged device.