Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

Christoph Friedrich Bayer; Eberhard Bär; Birgit Kallinger; Patrick Berwian

doi:10.4028/www.scientific.net/MSF.821-823.616

Paper Titles

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A New 1200V SiC MPS Diode with Improved Performance and Ruggedness
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The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics
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Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA
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Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC
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Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

Abstract:

This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al₂O₃, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (AlN, 48/96 diodes) and 123 °C/144 °C (Al₂O₃, 48/96 diodes). Assuming a constant applied voltage, a variance of ±0.5 V of the characteristic curve (forward voltage versus current) due to variations in the production process was considered fork single diodes. For a shift of +0.5 V for a single diode, the maximum temperature difference to the cooler temperature becomes approximately twice the original difference. Additionally, the operation under constant current (7.1 A, 10.2 A, 14.2 A) was studied including single diode failure. For single diode failure, the resulting change of the maximum temperature would be less than 3 %.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

616-619

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.616

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Online since:

June 2015

Authors:

Christoph Friedrich Bayer*, Eberhard Bär, Birgit Kallinger, Patrick Berwian

Keywords:

High Power SiC Diode Module, High Voltage, Modular Technology, Packaging, PiN Diode, Thermal Simulation

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References

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DOI: 10.4028/www.scientific.net/msf.679-680.531

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