Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes

Alexey V. Afanasyev; Boris V. Ivanov; Vladimir A. Ilyin; Alexey F. Kardo-Sysoev; Victor V. Luchinin; Sergey A. Reshanov; Adolf Schöner; A.A. Smirnov

doi:10.4028/www.scientific.net/MSF.821-823.632

Paper Titles

Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA
p.616

Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC
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Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications
p.624

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p⁺−i−n Diodes
p.628

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p⁺-p^–-n⁺ 4H-SiC Drift Step Recovery Diodes
p.632

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
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Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
p.640

4H-SiC P⁺N UV Photodiodes for Space Applications
p.644

Characterization of 4H-SiC pn Structures with Unstable Excess Current
p.648

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Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p⁺-p^–-n⁺ 4H-SiC Drift Step Recovery Diodes

Abstract:

In this paper we report on the effect of temperature and injection level on the effective lifetime of non-equilibrium charge carriers in p-base of 4H-SiC PiN diodes. Studies were carried out on 1kV drift step recovery diodes (DSRDs) with p⁺-p^--n⁺. The lifetime of non-equilibrium charge carriers in 4H-SiC p⁺-p^--n⁺ structures increases by an average of 6 times from 250ns to 1.4μs with the increase of the samples temperature from 300K to 673K. However, increase of the injection level in the drift region from 2.3·10¹⁶cm^-3 to 5.9·10¹⁶cm^-3 does not affect the lifetime indicating that Shockley-Read-Hall recombination processes are dominating.