4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

Shi Qian Shao; Wei Cheng Lien; Ayden Maralani; Jim C. Cheng; Kristen L. Dorsey; Albert P. Pisano

doi:10.4028/www.scientific.net/MSF.821-823.636

Paper Titles

Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC
p.620

Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications
p.624

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p⁺−i−n Diodes
p.628

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p⁺-p^–-n⁺ 4H-SiC Drift Step Recovery Diodes
p.632

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
p.636

Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
p.640

4H-SiC P⁺N UV Photodiodes for Space Applications
p.644

Characterization of 4H-SiC pn Structures with Unstable Excess Current
p.648

The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
p.652

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4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

Abstract:

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.