The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices

Hiroyuki Matsushima; Hiroyuki Okino; Kazuhiro Mochizuki; Renichi Yamada

doi:10.4028/www.scientific.net/MSF.821-823.652

Paper Titles

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
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Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
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4H-SiC P⁺N UV Photodiodes for Space Applications
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Characterization of 4H-SiC pn Structures with Unstable Excess Current
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The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
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Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC
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Industrial Approach for Next Generation of Power Devices Based on 4H-SiC
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Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
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Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs
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The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices

Abstract:

A novel method for analyzing a decrease in breakdown voltage (V_BD) in the termination of 4H-SiC power devices after reverse-bias stressing on the basis of change in depletion-layer capacitance is proposed. Test PN diodes terminated with a junction-termination extension (JTE) were fabricated on n-type 4H-SiC and analyzed by I-V and C-V measurements. According to the results of the measurements, V_BD after stressing decreases, and the capacitance of the test devices decreases after stressing. Measurements with different chip sizes but the same termination width show that the capacitance decrease occurs in the termination area. The simulated capacitance change, on the supposition that positive charge accumulated at the SiO₂/SiC interface, and the measured capacitance change show the same tendency. These results indicate that the origin of V_BD decrease is positive charge accumulated at the SiO₂/SiC interface of the termination after reverse-bias stressing.