Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

Manato Deki; Takahiro Makino; Kazutoshi Kojima; Takuro Tomita; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.821-823.673

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Instability of Critical Electric Field in Gate...

Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

Abstract:

The critical electric field (E_cr) of the gate oxide in 4H-Silicon Carbide (SiC) MOSFETs was measured under inversion bias conditions with ion irradiation. The Linear Energy Transfer (LET) dependence of the E_cr at which the gate oxide breakdown occurred in these MOSFETs was evaluated. The linear relationship between the E_cr^-1 and LET was observed for SiC MOSFETs. The slope of the LET-1/E_cr for SiC MOSFETs is almost the same that of the LET-1/E_cr lines for SiC MOS capacitors. The V_ds dependence of E_cr was also evaluated. The correlation between the direction of electric field of drain-source region and direction of ion incidence affects to instability of E_cr.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

673-676

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.673

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Online since:

June 2015

Authors:

Manato Deki*, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita, Takeshi Ohshima

Keywords:

Field Effect Transistor (FET), Heavy Ion Irradiation, Metal-Oxide-Semiconductor (MOS), Single Event Gate Rupture

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