Degradation and Reliability of Bare Dies Operated up to 300°C

Abstract:

In this paper, we demonstrate the degradation of commercially available 1.2kV SiC MOSFET bare dies subjected to long periods of isothermal heating at 300°C in air. Periodic electrical measurements indicated an increase in on-state resistance to different extents for three different vendor designs, and the discovery of a progressive rectifying type forward characteristic at low drain-source voltages. Subsequent investigations to determine the cause of the degraded electrical characteristics including sectioning and SEM/TEM analysis revealed some mechanical degradation within the device gate-source cross-sections and backside drain contact metal layers. While one vendor device was severely degraded after approximately 24 hours of heating, another vendor device was only just beginning to degrade after 100 hours, indicating that these devices may be used successfully in real applications at 300°C junction temperatures for relatively long periods.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 681-684
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.681
• Online since: June 2015
• Authors: Dean Hamilton, M. Jennings, Stephen York, Steven A. Hindmarsh, Y. Sharma, C. Fisher, P. Mawby
• Keywords: Aging, Bare Dies, High Temperature, Performance, Reliability, Silicon Carbide MOSFETs

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