Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

Ayayi Claude Ahyi; Aaron Modic; C. Jiao; Y. Zheng; Gang Liu; L.C. Feldman; Sarit Dhar

doi:10.4028/www.scientific.net/MSF.821-823.693

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Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
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SiC MOSFETs in Hard-Switching Bidirectional DC/DC Converters
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Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
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Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Channel Mobility Improvement in 4H-SiC MOSFETs...

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

Abstract:

Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristics of NO passivated devices has been identified.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

693-696

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.693

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Online since:

June 2015

Authors:

Ayayi Claude Ahyi, Aaron Modic, C. Jiao, Y. Zheng, Gang Liu, L.C. Feldman, Sarit Dhar*

Keywords:

As, Counter Doping, CV, Low Temperature, Mobility, NO, Sb, SiC MOSFET

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* - Corresponding Author

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