Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

Scott Allen; Vipindas Pala; E. VanBrunt; Brett Hull; Lin Cheng; S. Ryu; Jim Richmond; M. O’Loughlin; Albert A. Burk; J. Palmour

doi:10.4028/www.scientific.net/MSF.821-823.701

Paper Titles

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
p.685

SiC MOSFETs in Hard-Switching Bidirectional DC/DC Converters
p.689

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
p.693

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
p.697

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV
p.701

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments
p.705

Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs
p.709

Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs
p.713

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
p.717

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Next-Generation Planar SiC MOSFETs from 900 V to...

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

Abstract:

A family of planar MOSFETs with voltage ratings from 900 V to 15 kV are demonstrated. This family of planar MOSFETs represents Cree’s next generation MOSFET design and process, in which we continue to refine and evolve device design and processing to further shrink die sizes and enhance device performance. At voltage ratings of 3.3 kV and above, the specific on-resistance of the MOSFETs is approaching the theoretical limit. MOSFET switching performance in a clamped inductive switching circuit for the full range of voltage ratings is also demonstrated. Finally, improved threshold voltage and body diode stability under long-term stresses are presented.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

701-704

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.701

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Online since:

June 2015

Authors:

Scott Allen*, Vipindas Pala, E. VanBrunt, Brett Hull, Lin Cheng, S. Ryu, Jim Richmond, M. O’Loughlin, Albert A. Burk, J. Palmour

Keywords:

4H-SiC, High Voltage, MOSFET, Planar, Power, Switch

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