Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments

Takashi Yokoseki; Hiroshi Abe; Takahiro Makino; Shinobu Onoda; Yuki Tanaka; Mikio Kandori; Toru Yoshie; Yasuto Hijikata; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.821-823.705

Paper Titles

SiC MOSFETs in Hard-Switching Bidirectional DC/DC Converters
p.689

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
p.693

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
p.697

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV
p.701

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments
p.705

Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs
p.709

Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs
p.713

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
p.717

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces
p.721

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Recovery of the Electrical Characteristics of SiC...

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments

Abstract:

Effects of gamma-ray irradiation and subsequent thermal annealing on the characteristics of vertical structure power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) fabricated on 4H-SiC were studied. After irradiation at 1.2 MGy, the drain current – gate voltage curves of the MOSFETs shifted to the negative voltage side and the leakage drain current at inverse voltage increased. No significant change in the degraded electrical characteristics of SiC MOSFETs was observed by room temperature annealing. The degraded characteristics of SiC MOSFETs began to recover by annealing above 120 °C, and their characteristics reached almost the initial ones by annealing at 360 °C.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

705-708

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.705

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Online since:

June 2015

Authors:

Takashi Yokoseki*, Hiroshi Abe, Takahiro Makino, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

Keywords:

Gamma-Ray Irradiation, MOSFET, Thermal Annealing

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