Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

Abstract:

We report here on results obtained using a time-dependent drift-diffusion model to simulate ion transport in the gate oxide of a SiC MOS device during bias-temperature instability measurements to assess the impact on threshold voltage under typical testing conditions. Measured threshold voltage is found to depend strongly on the temperature and mobile ion species, which in combination with the measurement parameters determine how the ions react to the stress and measurement sequence. Simulations show that, based on their mobilities, both potassium-like and copper-like ions may be responsible for experimental observations of a negative trend in threshold instability above 100 °C for SiC MOS devices.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 697-700
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.697
• Online since: June 2015
• Authors: Daniel B. Habersat*, Neil Goldsman, Aivars J. Lelis
• Keywords: Bias Instability, Charge Trapping, Drift Diffusion, Mobile Ion, Numerical Simulation, SiC MOS

References

[1] K. Matocha and V. Tilak, Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface, Mater. Sci. Forum, vol. 679–680, p.318–325, Mar. (2011).

DOI: 10.4028/www.scientific.net/msf.679-680.318

[2] D. B. Habersat, A. J. Lelis, and R. Green, Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices, Mater. Sci. Forum, vol. 717–720, p.461–464, May (2012).

DOI: 10.4028/www.scientific.net/msf.717-720.461

[3] A. Chanthaphan, T. Hosoi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe, Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures, Appl. Phys. Lett., vol. 100, no. 25, p.252103–252103–4, Jun. (2012).

DOI: 10.1063/1.4729780

[4] A. J. Lelis, D. Habersat, R. Green, and N. Goldsman, Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability, Mater. Sci. Forum, vol. 600–603, p.807–810, (2009).

DOI: 10.4028/www.scientific.net/msf.600-603.807

[5] D. B. Habersat, A. J. Lelis, and N. Goldsman, Simulating Ion Transport and its Effects in Silicon Carbide Power MOSFET Gate Oxides, in 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.324–327.

DOI: 10.1109/sispad.2013.6650640

[6] A. J. Lelis, D. Habersat, R. Green, A. Ogunniyi, M. Gurfinkel, J. Suehle, and N. Goldsman, Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements, Electron Devices IEEE Trans. On, vol. 55, no. 8, p.1835–1840, Aug. (2008).

DOI: 10.1109/ted.2008.926672

[7] S. Selberherr, Analysis and Simulation of Semiconductor Devices. [Mit Fig. ] - Wien 1983. 6, 2, 451 Bl. 4°. Springer-Verlag, (1984).

[8] G. Greeuw and J. F. Verwey, The mobility of Na+, Li+, and K+ ions in thermally grown SiO2 films, J. Appl. Phys., vol. 56, no. 8, p.2218–2224, (1984).

DOI: 10.1063/1.334256

[9] M. W. Hillen, G. Greeuw, and J. F. Verweij, On the mobility of potassium ions in SiO2, J. Appl. Phys., vol. 50, no. 7, p.4834–4837, Jul. (1979).

DOI: 10.1063/1.326547

[10] Y. Shacham‐Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham, Copper Transport in Thermal SiO2, J. Electrochem. Soc., vol. 140, no. 8, p.2427–2432, Aug. (1993).

DOI: 10.1149/1.2220837

[11] E. I. Goldman, A. G. Zhdan, and G. V. Chucheva, Ion transport phenomena in oxide layer on the silicon surface and electron-ion exchange effects at the SiO2/Si interface, J. Appl. Phys., vol. 89, no. 1, p.130–145, (2001).

DOI: 10.1063/1.1327610