Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

Mitsuru Sometani; Dai Okamoto; Shinsuke Harada; Hitoshi Ishimori; Shinji Takasu; Tetsuo Hatakeyama; Manabu Takei; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.685

Paper Titles

Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
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Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs
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Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs
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Degradation and Reliability of Bare Dies Operated up to 300°C
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Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
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SiC MOSFETs in Hard-Switching Bidirectional DC/DC Converters
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Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
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Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
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Next-Generation Planar SiC MOSFETs from 900 V to 15 kV
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Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

Abstract:

In this work, we investigated the methods that measure the threshold voltage (V_th) instability without relaxation of the gate stress during the V_th measurement. We propose a non-relaxation method that demonstrates exact V_th shifts compared with conventional methods that are not as accurate. In the non-relaxation method, the constant gate-source voltage (V_gs) is continuously applied as a gate stress while the drain voltage (V_d_s) shift required to maintain a constant drain current (I_d) is measured. Then, the V_d_s shift is converted to a V_th shift. The V_th shift values measured by the non-relaxation method are larger than those measured by the other methods, which means that the non-relaxation method can very accurately measure the V_th shift.