Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring

Kazuhiro Mochizuki; Hiroyuki Okino; Hiroyuki Matsushima; Yoshiaki Toyota

doi:10.4028/www.scientific.net/MSF.821-823.640

Paper Titles

Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications
p.624

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p⁺−i−n Diodes
p.628

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p⁺-p^–-n⁺ 4H-SiC Drift Step Recovery Diodes
p.632

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
p.636

Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
p.640

4H-SiC P⁺N UV Photodiodes for Space Applications
p.644

Characterization of 4H-SiC pn Structures with Unstable Excess Current
p.648

The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
p.652

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC
p.656

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Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring

Abstract:

4H-SiC (0001) p-n diodes terminated with a floating-field ring were found to emit light at breakdown in the opposite direction to that of substrate misorientation when the diodes were fabricated by aluminum implantation and dry-oxidation passivation. Two-dimensional simulation revealed that such non-uniform breakdown was mainly attributable to the asymmetric lateral straggling of implanted aluminum acceptors, rather than the anisotropic nature of the impact ionization coefficient.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

640-643

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.640

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Online since:

June 2015

Authors:

Kazuhiro Mochizuki*, Hiroyuki Okino, Hiroyuki Matsushima, Yoshiaki Toyota

Keywords:

4H-SiC, Aluminium, Avalanche Phenomenon, Floating-Field Ring, Implantation

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