Polarity Inversion of SiC(0001) during the Al Doped PVT Growth

Kazuma Eto; Tomonori Miura; Tomohisa Kato; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.73

Paper Titles

High Quality 150 mm 4H SiC Wafers for Power Device Production
p.56

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
p.60

Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
p.64

Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces
p.68

Polarity Inversion of SiC(0001) during the Al Doped PVT Growth
p.73

Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC
p.77

SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders
p.81

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
p.85

Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
p.90

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Polarity Inversion of SiC(0001) during the Al...

Polarity Inversion of SiC(0001) during the Al Doped PVT Growth

Abstract:

We found that the polarity of the 4H-SiC is reversed from Si-face to C-face by high Al doping during the physical vapor transport (PVT) growth. KOH etching and deep ultraviolet (DUV) Raman spectroscopy were used to confirm the polarity of the grown crystals. The results show the polarity inversion is occurred in the samples grown on Si-face SiC with using Al doped SiC source material.