High Quality 150 mm 4H SiC Wafers for Power Device Production

Jeffrey Quast; Darren Hansen; Mark Loboda; Ian Manning; Kevin Moeggenborg; Stephan Mueller; Chris Parfeniuk; Edward Sanchez; Clinton Whiteley

doi:10.4028/www.scientific.net/MSF.821-823.56

Paper Titles

Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth
p.39

Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method
p.43

Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
p.47

High Quality 100 mm 4H-SiC Substrate
p.51

High Quality 150 mm 4H SiC Wafers for Power Device Production
p.56

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
p.60

Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
p.64

Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces
p.68

Polarity Inversion of SiC(0001) during the Al Doped PVT Growth
p.73

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823High Quality 150 mm 4H SiC Wafers for Power Device...

High Quality 150 mm 4H SiC Wafers for Power Device Production

Abstract:

The commercial availability of high quality 150 mm 4H SiC wafers has aided in the growth of SiC power device fabrication. The progress of 150 mm 4H SiC wafer development at Dow Corning is reviewed. Defect densities compare well to those typical for 100 mm wafers, with even lower threading screw dislocation densities observed in 150 mm wafers. Resistivity data shows a comparable range from 0.012 – 0.025 ohm.cm, and excellent shape control is highlighted for wafer thicknesses of 350 μm and 500 μm.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

56-59

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.56

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Online since:

June 2015

Authors:

Jeffrey Quast*, Darren Hansen, Mark Loboda, Ian Manning, Kevin Moeggenborg, Stephan Mueller, Chris Parfeniuk, Edward Sanchez, Clinton Whiteley

Keywords:

150 Mm, 4H-SiC, Basal Plane Dislocation (BPD), Micropipe, Resistivity, Threading Screw Dislocation

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