Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
p.31
p.31
Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
p.35
p.35
Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth
p.39
p.39
Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method
p.43
p.43
Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
p.47
p.47
High Quality 100 mm 4H-SiC Substrate
p.51
p.51
High Quality 150 mm 4H SiC Wafers for Power Device Production
p.56
p.56
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
p.60
p.60
Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
p.64
p.64
Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
Abstract:
p-type SiC crystals doped with aluminum and nitrogen were grown by the sublimation method. We found that Al and N co-doping is effective for stabilized growth of p-type 4H-SiC polytype. We studied the relationship of polytype of grown crystals and the condition of Al and N feeding during the crystal growth. p-type 4H-SiC with p~1 x 1018 cm-3 are stably-obtained with this method.
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Periodical:
Materials Science Forum (Volumes 821-823)
Pages:
47-50
Citation:
Online since:
June 2015
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© 2015 Trans Tech Publications Ltd. All Rights Reserved
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