Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC

Kuniharu Fujii; Koichi Takei; Masahiro Aoshima; Nachimuthu Senguttuvan; Masahiko Hiratani; Toru Ujihara; Yuji Matsumoto; Tomohisa Kato; Kazuhisa Kurashige; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.35

Paper Titles

Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
p.18

Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
p.22

Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
p.26

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
p.31

Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
p.35

Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth
p.39

Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method
p.43

Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
p.47

High Quality 100 mm 4H-SiC Substrate
p.51

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Influences of Solution Flow and Lateral...

Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC

Abstract:

The influences of solution flow and lateral temperature distribution on the surface morphology of the 4H-SiC single crystal grown from solution was investigated. A flat surface region was enlarged by the seed-rotation rate. The solution flow simulation indicated that the higher rotation rate made the outward solution flow ordered beneath the solution surface. Such a solution flow was thought to be effective to enlarge the flat region of growth front. Furthermore, a full-flat surface was obtained with a hollow-type graphite rod at a seed-rotation rate of 60 min^-1. The simulated results of temperature distribution showed the hollow-type graphite rod reduced the lateral temperature gradient at the SiC-solution interface. The ordered solution flow and the small temperature gradient at the growth front were found to be effective to make the growth front flat in the solution-growth method.

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Materials Science Forum (Volumes 821-823)

Pages:

35-38

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.35

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Online since:

June 2015

Authors:

Kuniharu Fujii*, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige, Hajime Okumura

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Crystal Growth, Morphology, Solution Flow, Temperature Distribution

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