Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth

Shota Endo; K. Kamei; Y. Kishida; K. Moriguchi

doi:10.4028/www.scientific.net/MSF.821-823.26

Paper Titles

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
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Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent
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Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
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Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
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Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
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Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
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Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
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Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth
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Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Effects of Crystalline Polarity and Temperature...

Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth

Abstract:

The off-axis solution growth of 4H-SiC was studied focusing on the morphological instabilities by using conventional TSSG technique. The morphology depends strongly on the crystalline polarity, and that on Si surface can be characterized by wandering while that on C surface is characterized by strong step-bunching. By raising the temperature gradient, step bunching on Si surface is considerably suppressed which can be consistent to the constitutional super cooling scheme. However, C surface exhibits strong step bunching as the temperature gradient increase. These behaviors can be explained by the difference in Ehrlich-Schwoebel barrier and diffusion behavior of adatoms.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

26-30

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.26

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Online since:

June 2015

Authors:

Shota Endo*, K. Kamei, Y. Kishida, K. Moriguchi

Keywords:

4H-SiC, Off-Axis, Polarity, Solution Growth, Step Bunching, Temperature Gradient, Wandering

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