4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

Takeshi Mitani; Naoyoshi Komatsu; Tetsuo Takahashi; Tomohisa Kato; Toru Ujihara; Yuji Matsumoto; Kazuhisa Kurashige; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.9

Paper Titles

Preface, Committees and Sponsors

Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
p.3

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
p.9

Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent
p.14

Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
p.18

Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
p.22

Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
p.26

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
p.31

Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
p.35

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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

Abstract:

We have investigated the solution growth under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions, while using the effect of Al-addition to stabilize both growth surface and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed.