Dislocation Conversion During SiC Solution Growth for High-Quality Crystals

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Solution growth of SiC has attracted significant attention due to its potential for the production of high-quality SiC wafers. We have recently investigated the dislocation propagation behavior during SiC solution growth with the aim of reducing the dislocation density. Threading dislocations were found to be converted to defects on the basal planes during solution growth. Utilizing this dislocation conversion phenomenon, we have proposed a dislocation reduction process during solution growth and achieved high-quality 4H-SiC crystal growth. Here we confirm the potential of SiC solution growth for the production of high-quality SiC wafers.

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Periodical:

Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro

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3-8

Citation:

S. Harada et al., "Dislocation Conversion During SiC Solution Growth for High-Quality Crystals", Materials Science Forum, Vols. 821-823, pp. 3-8, 2015

Online since:

June 2015

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$38.00

* - Corresponding Author

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