Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent

Naoyoshi Komatsu; Takeshi Mitani; Tetsuo Takahashi; Tomohisa Kato; Kazuhisa Kurashige; Yuji Matsumoto; Toru Ujihara; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.14

Paper Titles

Preface, Committees and Sponsors

Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
p.3

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
p.9

Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent
p.14

Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
p.18

Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
p.22

Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
p.26

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
p.31

Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
p.35

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Change in Surface Morphology by Addition of...

Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent

Abstract:

In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

14-17

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

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Online since:

June 2015

Authors:

Naoyoshi Komatsu*, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, Hajime Okumura

Keywords:

Additive, Impurity, Solution Growth, Surface Morphology

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