Preface, Committees and Sponsors
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
p.3
p.3
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
p.9
p.9
Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent
p.14
p.14
Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
p.18
p.18
Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
p.22
p.22
Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
p.26
p.26
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
p.31
p.31
Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
p.35
p.35
Preface, Committees and Sponsors
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 821-823)
Online since:
June 2015
Сopyright:
© 2015 Trans Tech Publications Ltd. All Rights Reserved
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