Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds

Abstract:

The solution growth of SiC on an off-axis seed is effective on the reduction of threading dislocations. We proposed a novel method to grow a SiC crystal on an off-axis seed by top-seeded solution growth (TSSG). In our previous study, a unidirectional solution flow above a seed crystal is effective to suppress surface roughness in the growth on the off-axis seed. However, it is difficult to apply the unidirectional flow in an axisymmetric TSSG set-up. In this study, the unidirectional flow could be achieved by shifting the rotational axis away from the center of the seed crystal. As a result, the smooth surface was obtained in the wider area where the solution flow direction was opposite to the step-flow direction.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 31-34
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.31
• Online since: June 2015
• Authors: Tomonori Umezaki*, Daiki Koike, Shunta Harada, Toru Ujihara
• Keywords: 4H-SiC, Morphological Instability, Numerical Simulation, Solution Flow, Solution Growth

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