Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal

Abstract:

We achieved the convex growth interface shape in top-seeded solution growth of SiC applying non-axisymmetric solution convection induced by non-axisymmetric temperature distribution. The detailed solution flow, temperature distribution and carbon concentration distribution were calculated by 3-dimensional numerical analysis. In the present case, the solution flow below the crystal was unidirectional and the supersaturation was increased along the solution flow direction. By the rotation of the crystal in the unidirectional flow and the temperature distribution, we successfully obtained the crystal with the convex growth interface shape.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 18-21
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.18
• Online since: June 2015
• Authors: Daiki Koike*, Tomonori Umezaki, Kenta Murayama, Kenta Aoyagi, Shunta Harada, M. Tagawa, Takenobu Sakai, Toru Ujihara
• Keywords: 4H-SiC, Growth Interface Shape, Numerical Analysis, Solution Convection, Top Seeded Solution Growth (TSSG)

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