For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
p.26
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
p.31
Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
p.35
Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth
p.39
Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method
p.43
Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
p.47
High Quality 100 mm 4H-SiC Substrate
p.51
High Quality 150 mm 4H SiC Wafers for Power Device Production
p.56
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
p.60

Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method

Article Preview

Abstract:

The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a more C-rich for the polytype stability of 4H-SiC crystal and a uniform radial temperature gradient. The dendrite structure obtained from SiC source powder in the crucible with porous graphite plate was more densely formed than that in the conventional crucible. The crystal quality of 4H-SiC single crystals grown in porous graphite inserted crucible was revealed to be better than that of crystal grown SiC crystals in the conventional crucible.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2014 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

43-46

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.43

Citation:

Cite this paper

Online since:

June 2015

Authors:

Hee Jun Lee, Hee Tae Lee, Hee Won Shin, Mi Seon Park, Yeon Suk Jang, Won Jae Lee*, Im Gyu Yeo, Tai Hee Eun, Jang Yul Kim, Myoung Chul Chun, Si Hyun Lee, Jung Gon Kim

Keywords:

4H-SiC, Crystal Quality, Polytype Stabilization, Porous Graphite, PVT

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] Yu. M. Tairov, V.F. Tsvetkov, J. Crystal Growth. 52 (1981) 146-150.

Google Scholar

[2] E. Schmitt, Thomas Straubinger, Michael Rasp, Arnd-Dietrich Weber, J. Superlattices and Microstructure. 40 (2006) 320-327.

Google Scholar

[3] M. Kanaya, J. Takahashi, Y. Fujiwara, A. Moritani, Applied Physics Letters. 58 (1991) 56-59.

Google Scholar

[4] Yu. M Tairov, V.F. Tsvetkov, J. Crystal Growth. 7 (1983) 111-161.

Google Scholar

[5] A. Fissel, J. Crystal Growth. 212 (2000) 438-450.

Google Scholar

[6] J. -Y. Yan, Q. -S. Chen, Y. –N. Jiang, H. Zhang, J. Crystal Growth. 385 (2014) 34-37.

Google Scholar

[7] Hiroshi Harima, Shin-ichi Nakashima, Tomoki Uemura, Applied Physics Letters. 78 (1995) 1996-(2005).

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.