Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth

Abstract:

Surface morphology of the SiC crystal grown on the C face of the 4H-SiC seed crystal by TSSG method using pure Si, Si-1at%Ti-C, Si-5at%Ti-C and Si-20at%Ti-C solvents was investigated. The surface morphology of the crystal grown from pure Si solvent was smooth. By the addition of Ti to the solvent, the surface morphology became rougher. The RMS value is not proportional to the concentration of Ti. The formation of macrosteps with several micrometers was observed when the addition of Ti increased to 5at% indicating the possibility of the threading screw dislocation conversion on the C face of the 4H-SiC crystal.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 39-42
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.39
• Online since: June 2015
• Authors: S. Xiao*, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Toru Ujihara
• Keywords: 4H-SiC, Solution Growth, Surface Morphology, Ti-Si-C

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