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ODMR Investigations of A - Centres in CdTe
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Picosecond Energy Transfer between Excitons and Defects in II-IV Semiconductors
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Luminescence of A 5d-Centre in ZnS
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Interstitial Defects in II-VI Semiconductors: Role of the Cation d States
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PAC Study of the Acceptor Li in II-VI Semiconductors
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Generation of Metastable Shallow Donors under Cooling in Hexagonal II-VI Semiconductors
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Strain Relief in Thin Films: Can we Control it?
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Composition Modulation Effects on the Generation of Defects in In_0.54Ga_0.46As Strained Layers
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Electron-Trapping Defects in MBE-Grown Relaxed n-In_0.05Ga_0.95As on Gallium Arsenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87PAC Study of the Acceptor Li in II-VI...

PAC Study of the Acceptor Li in II-VI Semiconductors

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1259-1264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1259

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Online since:

January 1992

Authors:

Herbert Wolf, Th. Krings, U. Ott, U. Hornauer, Th. Wichert

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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