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PAC Study of the Acceptor Li in II-VI Semiconductors
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Generation of Metastable Shallow Donors under Cooling in Hexagonal II-VI Semiconductors
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Strain Relief in Thin Films: Can we Control it?
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Composition Modulation Effects on the Generation of Defects in In_0.54Ga_0.46As Strained Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Generation of Metastable Shallow Donors under...

Generation of Metastable Shallow Donors under Cooling in Hexagonal II-VI Semiconductors

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1265-1270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1265

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Online since:

January 1992

Authors:

N.E. Korsunskaya, I.V. Markevich, E.P. Shulga, I.A. Drozdova, Moissei K. Sheinkman

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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